Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces
文献类型：期刊论文
| 作者 | Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang |
| 刊名 | physica status solidi (a)
 |
| 出版日期 | 2013 |
| 卷号 | 210期号:11页码:2503–2509 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24494]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang. Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces[J]. physica status solidi (a),2013,210(11):2503–2509. |
| APA | Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang.(2013).Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces.physica status solidi (a),210(11),2503–2509. |
| MLA | Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang."Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces".physica status solidi (a) 210.11(2013):2503–2509. |
入库方式： OAI收割
来源：半导体研究所
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