Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers
文献类型:期刊论文
作者 | DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei |
刊名 | chinese physics letters |
出版日期 | 2013 |
卷号 | 30期号:9页码:096105 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-03-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/24496] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei. Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers[J]. chinese physics letters,2013,30(9):096105. |
APA | DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei.(2013).Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers.chinese physics letters,30(9),096105. |
MLA | DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei."Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers".chinese physics letters 30.9(2013):096105. |
入库方式: OAI收割
来源:半导体研究所
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