中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers

文献类型:期刊论文

作者DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei
刊名chinese physics letters
出版日期2013
卷号30期号:9页码:096105
学科主题半导体材料
收录类别SCI
语种英语
公开日期2014-03-17
源URL[http://ir.semi.ac.cn/handle/172111/24496]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei. Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers[J]. chinese physics letters,2013,30(9):096105.
APA DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei.(2013).Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers.chinese physics letters,30(9),096105.
MLA DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei."Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers".chinese physics letters 30.9(2013):096105.

入库方式: OAI收割

来源:半导体研究所

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