Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors
文献类型：期刊论文
| 作者 | Li, Huijie ; Liu, Guipeng ; Wei, Hongyuan ; Jiao, Chunmei ; Wang, Jianxia ; Zhang, Heng ; Dong Jin, Dong ; Feng, Yuxia ; Yang, Shaoyan ; Wang, Lianshan ; Zhu, Qinsheng ; Wang, Zhan-Guo |
| 刊名 | applied physics letters
 |
| 出版日期 | 2013 |
| 卷号 | 103期号:23页码:232109 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24505]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, Huijie,Liu, Guipeng,Wei, Hongyuan,et al. Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors[J]. applied physics letters,2013,103(23):232109. |
| APA | Li, Huijie.,Liu, Guipeng.,Wei, Hongyuan.,Jiao, Chunmei.,Wang, Jianxia.,...&Wang, Zhan-Guo.(2013).Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors.applied physics letters,103(23),232109. |
| MLA | Li, Huijie,et al."Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors".applied physics letters 103.23(2013):232109. |
入库方式： OAI收割
来源：半导体研究所
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