中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High performance AlGaNGaN power switch with Si3N4 Insulation

文献类型:期刊论文

作者Lin, Defeng ; Wang, Xiaoliang ; Xiao, Hongling ; Kang, He ; Wang, Cuimei ; Jiang, Lijuan ; Feng, Chun ; Chen, Hong ; Deng, Qingwen ; Bi, Yang ; Zhang, Jingwen ; Hou, Xun
刊名the european physical journal applied physics
出版日期2013
卷号61期号:1页码:10101
学科主题半导体材料
收录类别SCI
语种英语
公开日期2014-03-18
源URL[http://ir.semi.ac.cn/handle/172111/24512]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Lin, Defeng,Wang, Xiaoliang,Xiao, Hongling,et al. High performance AlGaNGaN power switch with Si3N4 Insulation[J]. the european physical journal applied physics,2013,61(1):10101.
APA Lin, Defeng.,Wang, Xiaoliang.,Xiao, Hongling.,Kang, He.,Wang, Cuimei.,...&Hou, Xun.(2013).High performance AlGaNGaN power switch with Si3N4 Insulation.the european physical journal applied physics,61(1),10101.
MLA Lin, Defeng,et al."High performance AlGaNGaN power switch with Si3N4 Insulation".the european physical journal applied physics 61.1(2013):10101.

入库方式: OAI收割

来源:半导体研究所

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