Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer
文献类型：期刊论文
| 作者 | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang |
| 刊名 | journal of alloys and compounds
 |
| 出版日期 | 2013 |
| 卷号 | 576页码:48–53 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-03-18 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24540]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang. Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer[J]. journal of alloys and compounds,2013,576:48–53. |
| APA | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang.(2013).Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer.journal of alloys and compounds,576,48–53. |
| MLA | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang."Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer".journal of alloys and compounds 576(2013):48–53. |
入库方式： OAI收割
来源：半导体研究所
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