Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width
文献类型:期刊论文
作者 | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang |
刊名 | journal of applied physics
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出版日期 | 2013 |
卷号 | 114期号:15页码:4507 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-03-18 |
源URL | [http://ir.semi.ac.cn/handle/172111/24542] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang. Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width[J]. journal of applied physics,2013,114(15):4507. |
APA | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang.(2013).Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width.journal of applied physics,114(15),4507. |
MLA | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang."Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width".journal of applied physics 114.15(2013):4507. |
入库方式: OAI收割
来源:半导体研究所
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