中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width

文献类型:期刊论文

作者Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
刊名journal of applied physics
出版日期2013
卷号114期号:15页码:4507
学科主题半导体材料
收录类别SCI
语种英语
公开日期2014-03-18
源URL[http://ir.semi.ac.cn/handle/172111/24542]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang. Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width[J]. journal of applied physics,2013,114(15):4507.
APA Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang.(2013).Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width.journal of applied physics,114(15),4507.
MLA Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang."Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width".journal of applied physics 114.15(2013):4507.

入库方式: OAI收割

来源:半导体研究所

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