The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy
文献类型：期刊论文
| 作者 | WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2013 |
| 卷号 | 30期号:5页码:7101 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-03-18 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24546]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong. The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy[J]. chinese physics letters,2013,30(5):7101. |
| APA | WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong.(2013).The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy.chinese physics letters,30(5),7101. |
| MLA | WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong."The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy".chinese physics letters 30.5(2013):7101. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。