The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile
文献类型：期刊论文
| 作者 | L. G. Zhu ; Q. M. Hu ; R. Yang |
| 刊名 | Journal of Physics-Condensed Matter
 |
| 出版日期 | 2014 |
| 卷号 | 26期号:5 |
| 关键词 | DFT plus U bandgap state diffusion total-energy calculations wave basis-set tio2 dynamics anatase metals oxide bulk |
| ISSN号 | 0953-8984 |
| 原文出处 | |
| 语种 | 英语 |
| 公开日期 | 2014-03-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/72511]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. G. Zhu,Q. M. Hu,R. Yang. The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile[J]. Journal of Physics-Condensed Matter,2014,26(5). |
| APA | L. G. Zhu,Q. M. Hu,&R. Yang.(2014).The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile.Journal of Physics-Condensed Matter,26(5). |
| MLA | L. G. Zhu,et al."The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile".Journal of Physics-Condensed Matter 26.5(2014). |
入库方式： OAI收割
来源：金属研究所
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