Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector
文献类型：期刊论文
| 作者 | Bao, Xichang1,2 ; Xu, Jintong2; Li, Chao2; Qiao, Hui2; Zhang, Yan2; Li, Xiangyang2
|
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2013-12-25 |
| 卷号 | 581期号:2013页码:289-292 |
| 关键词 | Photodetector GaN Ion implantation Negative differential capacitance Deep level centers |
| 英文摘要 | In this work, back-illuminated planar GaN-based p-i-n photodetectors were fabricated by Si implantation into GaN-based p-i-n structure grown by metal-organic chemical vapor deposition (MOCVD). The dark current density of the photodetector is 1.03 nA/cm(2) under zero bias. The unbiased responsivity is 0.122 A/W at 360 nm, corresponding to an external quantum efficiency of 42%. Temperature and frequency dependence of capacitance versus voltage characteristics of the photodetectors are also investigated respectively. A novel negative differential capacitance (NDC) effect observed in the photodetector at room temperature under the frequency of 120 kHz or at low temperature under relative high frequency (such as 200 kHz). The NDC effect becomes much more obvious with the temperature or frequency decreased. This novel phenomenon is mainly due to the carrier confinement of the deep level centers in the detector, which mainly include lattice defects formed by high dose ion implantation and subsequent annealing. (c) 2013 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 学科主题 | 先进功能有机材料 |
| 类目[WOS] | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 研究领域[WOS] | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 关键词[WOS] | ULTRAVIOLET PHOTODETECTORS ; IMPLANTATION ; PHOTODIODES ; DETECTORS ; NITRIDE |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000324823000048 |
| 公开日期 | 2014-03-24 |
| 源URL | [http://ir.qibebt.ac.cn:8080/handle/337004/1697]  |
| 专题 | 青岛生物能源与过程研究所_先进有机功能材料团队 |
| 作者单位 | 1.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bao, Xichang,Xu, Jintong,Li, Chao,et al. Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2013,581(2013):289-292. |
| APA | Bao, Xichang,Xu, Jintong,Li, Chao,Qiao, Hui,Zhang, Yan,&Li, Xiangyang.(2013).Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector.JOURNAL OF ALLOYS AND COMPOUNDS,581(2013),289-292. |
| MLA | Bao, Xichang,et al."Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector".JOURNAL OF ALLOYS AND COMPOUNDS 581.2013(2013):289-292. |
入库方式： OAI收割
来源：青岛生物能源与过程研究所
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