Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface
文献类型：期刊论文
| 作者 | Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng |
| 刊名 | applied surface science
 |
| 出版日期 | 2013 |
| 卷号 | 280页码:500–503 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2014-03-26 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24567]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng. Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface[J]. applied surface science,2013,280:500–503. |
| APA | Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng.(2013).Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface.applied surface science,280,500–503. |
| MLA | Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng."Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface".applied surface science 280(2013):500–503. |
入库方式： OAI收割
来源：半导体研究所
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