Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells
文献类型：期刊论文
| ; | |
| 作者 | Dong Zhang, Wenkai Lou, Maosheng Miao, Shou-cheng Zhang, Kai Chang |
| 刊名 | physical review letters
 ; Physical Review Letters
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 111期号:15页码:6402 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-03-26 ; 2014-03-26 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24572]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Dong Zhang, Wenkai Lou, Maosheng Miao, Shou-cheng Zhang, Kai Chang. Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells, Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells[J]. physical review letters, Physical Review Letters,2013, 2013,111, 111(15):6402, 6402. |
| APA | Dong Zhang, Wenkai Lou, Maosheng Miao, Shou-cheng Zhang, Kai Chang.(2013).Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells.physical review letters,111(15),6402. |
| MLA | Dong Zhang, Wenkai Lou, Maosheng Miao, Shou-cheng Zhang, Kai Chang."Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells".physical review letters 111.15(2013):6402. |
入库方式： OAI收割
来源：半导体研究所
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