Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates
文献类型：期刊论文
| ; | |
| 作者 | Emelyanov, E. A.; Kokhanenko, A. P.; Pchelyakov, O. P.; Loshkarev, I. D.; Seleznev, V. A.; Putyato, M. A.; Semyagin, B. R.; Preobrazhenskii, V. V.; Niu, Zhicuan; Ni, Haiqiao |
| 刊名 | russian physics journal
 ; Russian Physics Journal
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 56期号:1页码:55-61 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-03-26 ; 2014-03-26 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24578]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Emelyanov, E. A.,Kokhanenko, A. P.,Pchelyakov, O. P.,et al. Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates, Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates[J]. russian physics journal, Russian Physics Journal,2013, 2013,56, 56(1):55-61, 55-61. |
| APA | Emelyanov, E. A..,Kokhanenko, A. P..,Pchelyakov, O. P..,Loshkarev, I. D..,Seleznev, V. A..,...&Ni, Haiqiao.(2013).Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates.russian physics journal,56(1),55-61. |
| MLA | Emelyanov, E. A.,et al."Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates".russian physics journal 56.1(2013):55-61. |
入库方式： OAI收割
来源：半导体研究所
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