Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlattices
文献类型:期刊论文
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作者 | Guowei, Wang; Wei, Xiang; Yingqiang, Xu; Liang, Zhang; Zhenyu, Peng; Yanqiu, Lü; Junjie, Si; Juan, Wang; Junliang, Xing; Zhengwei, Ren |
刊名 | journal of semiconductors
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出版日期 | 2013 ; 2013 |
卷号 | 34期号:11页码:114012 |
学科主题 | 半导体物理 ; 半导体物理 |
收录类别 | SCI |
语种 | 英语 ; 英语 |
公开日期 | 2014-03-26 ; 2014-03-26 |
源URL | [http://ir.semi.ac.cn/handle/172111/24579] ![]() |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Guowei, Wang,Wei, Xiang,Yingqiang, Xu,et al. Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlattices, Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlattices[J]. journal of semiconductors, Journal of Semiconductors,2013, 2013,34, 34(11):114012, 114012. |
APA | Guowei, Wang.,Wei, Xiang.,Yingqiang, Xu.,Liang, Zhang.,Zhenyu, Peng.,...&Zhichuan, Niu.(2013).Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlattices.journal of semiconductors,34(11),114012. |
MLA | Guowei, Wang,et al."Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlattices".journal of semiconductors 34.11(2013):114012. |
入库方式: OAI收割
来源:半导体研究所
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