Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN
文献类型：期刊论文
| ; | |
| 作者 | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang |
| 刊名 | acs applied materials & interfaces
 ; ACS Applied Materials & Interfaces
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 5期号:12页码:5797–5803 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 公开日期 | 2014-04-09 ; 2014-04-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24762]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang. Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN, Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN[J]. acs applied materials & interfaces, ACS Applied Materials & Interfaces,2013, 2013,5, 5(12):5797–5803, 5797–5803. |
| APA | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang.(2013).Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN.acs applied materials & interfaces,5(12),5797–5803. |
| MLA | Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang."Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN".acs applied materials & interfaces 5.12(2013):5797–5803. |
入库方式： OAI收割
来源：半导体研究所
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