Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells
文献类型：期刊论文
| ; | |
| 作者 | Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li |
| 刊名 | physica status solidi (a)
 ; physica status solidi (a)
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 210期号:3页码:559-562 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-04-09 ; 2014-04-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24785]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li. Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells, Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells[J]. physica status solidi (a), physica status solidi (a),2013, 2013,210, 210(3):559-562, 559-562. |
| APA | Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li.(2013).Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells.physica status solidi (a),210(3),559-562. |
| MLA | Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li."Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells".physica status solidi (a) 210.3(2013):559-562. |
入库方式： OAI收割
来源：半导体研究所
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