Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier
文献类型：期刊论文
| ; | |
| 作者 | Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li |
| 刊名 | ecs solid state lett.
 ; ECS Solid State Lett.
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 2期号:10页码:r37-r39 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-04-09 ; 2014-04-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24786]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li. Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier, Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier[J]. ecs solid state lett., ECS Solid State Lett.,2013, 2013,2, 2(10):r37-r39, R37-R39. |
| APA | Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li.(2013).Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier.ecs solid state lett.,2(10),r37-r39. |
| MLA | Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li."Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier".ecs solid state lett. 2.10(2013):r37-r39. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。