Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices
文献类型：期刊论文
| ; | |
| 作者 | Liancheng Wang, Zhiqiang Liu, Haiyang Zheng, Yiyun Zhang, Yan Cheng, Haizhong Xie, Liqiang Rao, Tongbo Wei, Hua Yang, Guodong Yuan, Xiaoyan Yi and Guohong Wang |
| 刊名 | rsc adv.
 ; RSC Adv.
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 3页码:10934-10943 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-04-09 ; 2014-04-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24788]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Liancheng Wang, Zhiqiang Liu, Haiyang Zheng, Yiyun Zhang, Yan Cheng, Haizhong Xie, Liqiang Rao, Tongbo Wei, Hua Yang, Guodong Yuan, Xiaoyan Yi and Guohong Wang. Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices, Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices[J]. rsc adv., RSC Adv.,2013, 2013,3, 3:10934-10943, 10934-10943. |
| APA | Liancheng Wang, Zhiqiang Liu, Haiyang Zheng, Yiyun Zhang, Yan Cheng, Haizhong Xie, Liqiang Rao, Tongbo Wei, Hua Yang, Guodong Yuan, Xiaoyan Yi and Guohong Wang.(2013).Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices.rsc adv.,3,10934-10943. |
| MLA | Liancheng Wang, Zhiqiang Liu, Haiyang Zheng, Yiyun Zhang, Yan Cheng, Haizhong Xie, Liqiang Rao, Tongbo Wei, Hua Yang, Guodong Yuan, Xiaoyan Yi and Guohong Wang."Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices".rsc adv. 3(2013):10934-10943. |
入库方式： OAI收割
来源：半导体研究所
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