Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography
文献类型:期刊论文
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作者 | Wu K; Zhang YY; Wei TB; Lan D; Sun B; Zheng HY; Lu HX; Chen Y; Wang JX; Luo Y |
刊名 | aip advances ; AIP ADVANCES |
出版日期 | 2013 ; 2013 |
卷号 | 3页码:092124 |
学科主题 | 半导体器件 ; 半导体器件 |
收录类别 | SCI |
语种 | 英语 ; 英语 |
公开日期 | 2014-04-09 ; 2014-04-09 |
源URL | [http://ir.semi.ac.cn/handle/172111/24790] |
专题 | 半导体研究所_中科院半导体照明研发中心 |
推荐引用方式 GB/T 7714 | Wu K,Zhang YY,Wei TB,et al. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography, Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography[J]. aip advances, AIP ADVANCES,2013, 2013,3, 3:092124, 092124. |
APA | Wu K.,Zhang YY.,Wei TB.,Lan D.,Sun B.,...&Li JM.(2013).Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography.aip advances,3,092124. |
MLA | Wu K,et al."Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography".aip advances 3(2013):092124. |
入库方式: OAI收割
来源:半导体研究所
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