中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography

文献类型:期刊论文

;
作者Wu K; Zhang YY; Wei TB; Lan D; Sun B; Zheng HY; Lu HX; Chen Y; Wang JX; Luo Y
刊名aip advances ; AIP ADVANCES
出版日期2013 ; 2013
卷号3页码:092124
学科主题半导体器件 ; 半导体器件
收录类别SCI
语种英语 ; 英语
公开日期2014-04-09 ; 2014-04-09
源URL[http://ir.semi.ac.cn/handle/172111/24790]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Wu K,Zhang YY,Wei TB,et al. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography, Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography[J]. aip advances, AIP ADVANCES,2013, 2013,3, 3:092124, 092124.
APA Wu K.,Zhang YY.,Wei TB.,Lan D.,Sun B.,...&Li JM.(2013).Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography.aip advances,3,092124.
MLA Wu K,et al."Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography".aip advances 3(2013):092124.

入库方式: OAI收割

来源:半导体研究所

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