中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth

文献类型:期刊论文

;
作者J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz
刊名ecs solid state lett. ; ECS Solid State Lett.
出版日期2013 ; 2013
卷号2期号:9页码:73-75
学科主题光电子学 ; 光电子学
收录类别SCI
语种英语 ; 英语
公开日期2014-04-04 ; 2014-04-04
源URL[http://ir.semi.ac.cn/handle/172111/24665]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz. Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth, Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth[J]. ecs solid state lett., ECS Solid State Lett.,2013, 2013,2, 2(9):73-75, 73-75.
APA J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz.(2013).Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth.ecs solid state lett.,2(9),73-75.
MLA J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz."Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth".ecs solid state lett. 2.9(2013):73-75.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。