Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature
文献类型：期刊论文
| ; | |
| 作者 | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan |
| 刊名 | materials science in semiconductor processing
 ; Materials Science in Semiconductor Processing
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 16期号:3页码:987–991 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-04-08 ; 2014-04-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24675]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan. Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature, Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature[J]. materials science in semiconductor processing, Materials Science in Semiconductor Processing,2013, 2013,16, 16(3):987–991, 987–991. |
| APA | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan.(2013).Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature.materials science in semiconductor processing,16(3),987–991. |
| MLA | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan."Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature".materials science in semiconductor processing 16.3(2013):987–991. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。