Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth
文献类型：期刊论文
| ; | |
| 作者 | Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Jiang, De-Sheng; Li, Zeng-Cheng; Zhou, Kun; Li, De-Yao; Zhang, Li-Qun; Wang, Feng; Wang, Hui |
| 刊名 | ieee photonics technology letters
 ; IEEE Photonics Technology Letters
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 25期号:24页码:2401-2404 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-04-09 ; 2014-04-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24730]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Feng, Mei-Xin,Liu, Jian-Ping,Zhang, Shu-Ming,et al. Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth, Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth[J]. ieee photonics technology letters, IEEE Photonics Technology Letters,2013, 2013,25, 25(24):2401-2404, 2401-2404. |
| APA | Feng, Mei-Xin.,Liu, Jian-Ping.,Zhang, Shu-Ming.,Jiang, De-Sheng.,Li, Zeng-Cheng.,...&Yang, Hui.(2013).Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth.ieee photonics technology letters,25(24),2401-2404. |
| MLA | Feng, Mei-Xin,et al."Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth".ieee photonics technology letters 25.24(2013):2401-2404. |
入库方式： OAI收割
来源：半导体研究所
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