Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN
文献类型：期刊论文
| ; | |
| 作者 | L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang |
| 刊名 | semiconductor science and technology
 ; Semiconductor Science and Technology
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 28期号:10页码:105020 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-04-09 ; 2014-04-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24761]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN, Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN[J]. semiconductor science and technology, Semiconductor Science and Technology,2013, 2013,28, 28(10):105020, 105020. |
| APA | L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang.(2013).Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN.semiconductor science and technology,28(10),105020. |
| MLA | L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang."Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN".semiconductor science and technology 28.10(2013):105020. |
入库方式： OAI收割
来源：半导体研究所
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