Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth
文献类型：期刊论文
| ; | |
| 作者 | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang |
| 刊名 | applied physics letters
 ; Applied Physics Letters
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 103期号:15页码:152109 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-04-09 ; 2014-04-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24764]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang. Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth, Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth[J]. applied physics letters, Applied Physics Letters,2013, 2013,103, 103(15):152109, 152109. |
| APA | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang.(2013).Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth.applied physics letters,103(15),152109. |
| MLA | Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang."Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth".applied physics letters 103.15(2013):152109. |
入库方式： OAI收割
来源：半导体研究所
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