Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator
文献类型：期刊论文
| 作者 | Wang LJ ; Li YP ; Song XF ; Liu X ; Zhang L ; Yan DH |
| 刊名 | applied physics letters
 |
| 出版日期 | 2013 |
| 卷号 | 103期号:24页码:文献号：243302 |
| 关键词 | FIELD-EFFECT TRANSISTORS THIN-FILM-TRANSISTOR ORGANIC SEMICONDUCTOR CAPACITANCE |
| ISSN号 | 0003-6951 |
| 通讯作者 | wang lj |
| 中文摘要 | we have investigated the interfacial and electrical properties of vanadyl-phthalocyanine (vopc) metal-insulator-semiconductor devices by the measurement of capacitance and conductance. the devices have been fabricated on ordered para-sexiphenyl (p-6p) layer with silicon nitride (sinx) as gate insulator. the vopc/p-6p/sinx devices have shown a negligible hysteresis, low series resistance, and high operated frequency. bulk traps have been distinguished from interface traps by two loss peaks in conductance measurement. trap densities and distribution of trap energy level have been obtained. the improved properties indicate that vopc/p-6p devices with sinx insulator hold a great promise of application in flexible displays. (c) 2013 aip publishing llc. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000328706500084 |
| 公开日期 | 2014-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/49405]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang LJ,Li YP,Song XF,et al. Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator[J]. applied physics letters,2013,103(24):文献号：243302. |
| APA | Wang LJ,Li YP,Song XF,Liu X,Zhang L,&Yan DH.(2013).Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator.applied physics letters,103(24),文献号：243302. |
| MLA | Wang LJ,et al."Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator".applied physics letters 103.24(2013):文献号：243302. |
入库方式： OAI收割
来源：长春应用化学研究所
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