Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base
文献类型：期刊论文
| 作者 | Huang JY ; Ma DG ; Hummelgen IA |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2013 |
| 卷号 | 28期号:11页码:文献号: 115001 |
| 关键词 | ORGANIC TRANSISTORS METAL-BASE HIGH-GAIN CHANNEL ARCHITECTURE |
| ISSN号 | 0268-1242 |
| 通讯作者 | ma dg |
| 中文摘要 | we report hybrid vertical architecture p-type transistors with poly(n-vinylcarbazole) as the emitter, p-type silicon as the collector and al:ca alloy layer as the base. the investigation of the common-base and common-emitter characteristics clearly demonstrates that the devices operate as permeable-base transistors (pbts). the pbts show common-base current gain alpha of 0.98 at -v-bc = 1.5 v and common-emitter gain beta of over 100. atomic force microscope images of the base layer show an uneven surface, showing that the annealing does not dissolve the charge trap states but offers 'pinholes' for the oxidation in-depth even through the whole base layer. in this case, the charge carriers must tunnel the thin oxidized layer, and then are collected. it is clearly seen that there exists a barrier against holes injection from the base to the collector semiconductor at the interface, and the further oxidation caused by exposing the devices in air changes the operational mode of the resulting devices from the pbt to the metal-base transistor. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000326378700001 |
| 公开日期 | 2014-04-15 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/49507]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang JY,Ma DG,Hummelgen IA. Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base[J]. semiconductor science and technology,2013,28(11):文献号: 115001. |
| APA | Huang JY,Ma DG,&Hummelgen IA.(2013).Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base.semiconductor science and technology,28(11),文献号: 115001. |
| MLA | Huang JY,et al."Performance of hybrid p-type vertical transistors with poly(N-vinylcarbazole) as emitter and the transfer mechanism of charge carriers through the base".semiconductor science and technology 28.11(2013):文献号: 115001. |
入库方式： OAI收割
来源：长春应用化学研究所
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