High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator
文献类型：期刊论文
| 作者 | Wang LJ ; Qin HT ; Zhang W ; Zhang L ; Yan DH |
| 刊名 | thin solid films
 |
| 出版日期 | 2013 |
| 卷号 | 545页码:514-516 |
| 关键词 | FIELD-EFFECT TRANSISTORS BIAS-STRESS ORGANIC SEMICONDUCTOR THRESHOLD VOLTAGE |
| ISSN号 | 0040-6090 |
| 通讯作者 | wang lj |
| 中文摘要 | the reliability of vanadyl-phthalocyanine (vopc) thin filmtransistors (tfts) with silicon nitride (sinx) gate insulator was investigated under bias stress conditions. the shift of threshold voltage in ambient air, in vacuum and at high temperature was discussed. the initial field-effect mobility and threshold voltage were 1.2 cm(2)/vs and -4.22 v, respectively. after a gate bias stress of -20 v for 10,000 s in ambient air, the threshold voltage showed a small shift of less than 0.6 v. in vacuum at high temperature, the shifts of threshold voltage were also below 1 v and current change of devices under the same bias condition was negligible. the excellent reliability was attributed to the reduction of interface defect states between vopc film and sinx gate insulator. these results show that vopc tfts using sinx insulator hold a great promise of application in active-matrix organic light emitting displays. (c) 2013 elsevier b.v. all rights reserved. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000324820800085 |
| 公开日期 | 2014-04-15 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/49524]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang LJ,Qin HT,Zhang W,et al. High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator[J]. thin solid films,2013,545:514-516. |
| APA | Wang LJ,Qin HT,Zhang W,Zhang L,&Yan DH.(2013).High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator.thin solid films,545,514-516. |
| MLA | Wang LJ,et al."High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator".thin solid films 545(2013):514-516. |
入库方式： OAI收割
来源：长春应用化学研究所
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