Pressure induced semiconductor to half metal transition in Sr2NiReO6
文献类型：期刊论文
| 作者 | Wang J ; Sun XB ; Zu NN ; Wu ZJ |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2013 |
| 卷号 | 114期号:16页码:文献号: 163705 |
| 关键词 | INITIO MOLECULAR-DYNAMICS TOTAL-ENERGY CALCULATIONS AUGMENTED-WAVE METHOD BASIS-SET MAGNETORESISTANCE |
| ISSN号 | 0021-8979 |
| 通讯作者 | wu zj |
| 中文摘要 | electronic and magnetic properties of sr2nireo6 have been studied by using the density functional method. experimentally, sr2nireo6 is a semiconductor at ambient conditions. by applying external pressure, a transition from semiconductor to half metal is realized. compared with ambient conditions, both the spin magnetic moments and the orbital moments of ni and re remain almost unchanged after pressure, indicating that no spin state transition is found. the estimated transition pressure is no more than 22.9 gpa. (c) 2013 aip publishing llc. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000326639200045 |
| 公开日期 | 2014-04-15 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/49527]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang J,Sun XB,Zu NN,et al. Pressure induced semiconductor to half metal transition in Sr2NiReO6[J]. journal of applied physics,2013,114(16):文献号: 163705. |
| APA | Wang J,Sun XB,Zu NN,&Wu ZJ.(2013).Pressure induced semiconductor to half metal transition in Sr2NiReO6.journal of applied physics,114(16),文献号: 163705. |
| MLA | Wang J,et al."Pressure induced semiconductor to half metal transition in Sr2NiReO6".journal of applied physics 114.16(2013):文献号: 163705. |
入库方式： OAI收割
来源：长春应用化学研究所
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