Interfacial dipole in organic p-n junction to realize write-once-read-many-times memory
文献类型:期刊论文
作者 | Wang LD ; Su ZS ; Wang C |
刊名 | organic electronics
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出版日期 | 2013 |
卷号 | 14期号:4页码:1163-1169 |
关键词 | FIELD-EFFECT TRANSISTORS ENERGY-LEVEL ALIGNMENT COPPER PHTHALOCYANINE THIN-FILM ELECTRONIC-STRUCTURE BISTABLE DEVICES POLYMER PERFORMANCE LAYER STABILITIES |
ISSN号 | 1566-1199 |
通讯作者 | su zs |
中文摘要 | a new approach is exploited to realize nonvolatile organic write-once-read-many-times (worm) memory based on copper phthalocyanine (cupc)/hexadecafluoro-copper-phthalocyanine (f16cupc) p-n junction. the as-fabricated device is found to be at its on state and can be programmed irreversibly to the off state by applying a negative bias. the worm device exhibits a high on/off current ratio of up to 2.6 x 10(4). an interfacial dipole layer is testified to be formed and destructed at the p-n junction interface for the on and off states, respectively. the on state at positive voltage region is attributed to the efficient hole and electron injection from the respective electrodes and then recombination at the cupc/f16cupc interface, and the transition of the device to the off state results from the destruction of the interfacial dipole layer and formation of an insulating layer which restricts charge carrier recombination at the interface. (c) 2013 elsevier b.v. all rights reserved. |
收录类别 | SCI收录期刊论文 |
语种 | 英语 |
WOS记录号 | WOS:000317347800021 |
公开日期 | 2014-04-16 |
源URL | [http://ir.ciac.jl.cn/handle/322003/49946] ![]() |
专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
推荐引用方式 GB/T 7714 | Wang LD,Su ZS,Wang C. Interfacial dipole in organic p-n junction to realize write-once-read-many-times memory[J]. organic electronics,2013,14(4):1163-1169. |
APA | Wang LD,Su ZS,&Wang C.(2013).Interfacial dipole in organic p-n junction to realize write-once-read-many-times memory.organic electronics,14(4),1163-1169. |
MLA | Wang LD,et al."Interfacial dipole in organic p-n junction to realize write-once-read-many-times memory".organic electronics 14.4(2013):1163-1169. |
入库方式: OAI收割
来源:长春应用化学研究所
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