中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Interfacial dipole in organic p-n junction to realize write-once-read-many-times memory

文献类型:期刊论文

作者Wang LD ; Su ZS ; Wang C
刊名organic electronics
出版日期2013
卷号14期号:4页码:1163-1169
关键词FIELD-EFFECT TRANSISTORS ENERGY-LEVEL ALIGNMENT COPPER PHTHALOCYANINE THIN-FILM ELECTRONIC-STRUCTURE BISTABLE DEVICES POLYMER PERFORMANCE LAYER STABILITIES
ISSN号1566-1199
通讯作者su zs
中文摘要a new approach is exploited to realize nonvolatile organic write-once-read-many-times (worm) memory based on copper phthalocyanine (cupc)/hexadecafluoro-copper-phthalocyanine (f16cupc) p-n junction. the as-fabricated device is found to be at its on state and can be programmed irreversibly to the off state by applying a negative bias. the worm device exhibits a high on/off current ratio of up to 2.6 x 10(4). an interfacial dipole layer is testified to be formed and destructed at the p-n junction interface for the on and off states, respectively. the on state at positive voltage region is attributed to the efficient hole and electron injection from the respective electrodes and then recombination at the cupc/f16cupc interface, and the transition of the device to the off state results from the destruction of the interfacial dipole layer and formation of an insulating layer which restricts charge carrier recombination at the interface. (c) 2013 elsevier b.v. all rights reserved.
收录类别SCI收录期刊论文
语种英语
WOS记录号WOS:000317347800021
公开日期2014-04-16
源URL[http://ir.ciac.jl.cn/handle/322003/49946]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式
GB/T 7714
Wang LD,Su ZS,Wang C. Interfacial dipole in organic p-n junction to realize write-once-read-many-times memory[J]. organic electronics,2013,14(4):1163-1169.
APA Wang LD,Su ZS,&Wang C.(2013).Interfacial dipole in organic p-n junction to realize write-once-read-many-times memory.organic electronics,14(4),1163-1169.
MLA Wang LD,et al."Interfacial dipole in organic p-n junction to realize write-once-read-many-times memory".organic electronics 14.4(2013):1163-1169.

入库方式: OAI收割

来源:长春应用化学研究所

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