Single crystal growth mechanism of sapphire
文献类型：期刊论文
| 作者 | Sun CT ; Xue DF |
| 刊名 | materials technology
 |
| 出版日期 | 2013 |
| 卷号 | 28期号:5页码:286-289 |
| 关键词 | CRYSTALLIZATION EVOLUTION CU2O MELT |
| ISSN号 | 1066-7857 |
| 通讯作者 | xue df |
| 中文摘要 | we studied the single crystal growth mechanism of sapphire on the basis of chemical bonding calculations at growth interface and the growth of bulk crystal by czochralski method. the high dislocation density of sapphire single crystals originated from octahedral linking of alo6 octahedra via sharing their common plane in the structure, which results in intrinsic defects in sapphire single crystals. on the basis of chemical bonding theory of single crystal growth, crystal morphology of sapphire was quantitatively calculated by the chemical bonding conditions of different crystal surfaces. thermodynamically, sapphire single crystal preferred to exhibit rhombohedral polyhedron bounded by six crystallographically equivalent {012} planes. bulk sapphire single crystal with the size of 55 mm in diameter and 210 mm in length was grown along the c-axis direction via czochralski method. |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000323823000010 |
| 公开日期 | 2014-04-20 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/50466]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun CT,Xue DF. Single crystal growth mechanism of sapphire[J]. materials technology,2013,28(5):286-289. |
| APA | Sun CT,&Xue DF.(2013).Single crystal growth mechanism of sapphire.materials technology,28(5),286-289. |
| MLA | Sun CT,et al."Single crystal growth mechanism of sapphire".materials technology 28.5(2013):286-289. |
入库方式： OAI收割
来源：长春应用化学研究所
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