Proximity effect at superconducting Sn-Bi2Se3 interface
文献类型：期刊论文
| 作者 | Xiang, T
|
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2012 |
| 卷号 | 85期号:10页码:104508 |
| 关键词 | TOPOLOGICAL INSULATORS ANDREEV-REFLECTION SURFACE STATES MICROJUNCTIONS CONDUCTANCE TRANSITION TRANSPORT JUNCTIONS SR2RUO4 |
| ISSN号 | 1098-0121 |
| 通讯作者 | Lu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Daniel Chee Tsui Lab, Beijing 100190, Peoples R China. |
| 英文摘要 | We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting transition temperature of Sn, including a small gap that is different from that of Sn, and a zero-bias conductance peak that increases at lower temperatures. We discussed the possible origins of the smaller gap and the zero-bias conductance peak. These phenomena support the idea that a proximity-effect-induced chiral superconducting phase is formed at the interface between the superconducting Sn and the strong spin-orbit coupling material Bi2Se3. |
| 学科主题 | Physics |
| 收录类别 | SCI |
| 资助信息 | MOST [2009CB929101, 2011CB921702]; NSFC [11174340, 11174357]; CAS |
| 原文出处 | http://dx.doi.org/10.1103/PhysRevB.85.104508 |
| 语种 | 英语 |
| WOS记录号 | WOS:000301476700003 |
| 公开日期 | 2014-04-25 |
| 源URL | [http://ir.itp.ac.cn/handle/311006/15143]  |
| 专题 | 理论物理研究所_理论物理所1978-2010年知识产出 |
| 推荐引用方式 GB/T 7714 | Xiang, T. Proximity effect at superconducting Sn-Bi2Se3 interface[J]. PHYSICAL REVIEW B,2012,85(10):104508. |
| APA | Xiang, T.(2012).Proximity effect at superconducting Sn-Bi2Se3 interface.PHYSICAL REVIEW B,85(10),104508. |
| MLA | Xiang, T."Proximity effect at superconducting Sn-Bi2Se3 interface".PHYSICAL REVIEW B 85.10(2012):104508. |
入库方式： OAI收割
来源：理论物理研究所
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