The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD
文献类型：期刊论文
| 作者 | Liang, Jing ; Hongling, Xiao ; Xiaoliang, Wang ; Cuimei, Wang ; Qingwen, Deng ; Zhidong, Li ; Jieqin, Ding ; Zhanguo, Wang ; Xun, Hou |
| 刊名 | journal of semiconductors
 |
| 出版日期 | 2013 |
| 卷号 | 34期号:11页码:113002 |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2014-04-30 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24868]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Liang, Jing,Hongling, Xiao,Xiaoliang, Wang,et al. The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD[J]. journal of semiconductors,2013,34(11):113002. |
| APA | Liang, Jing.,Hongling, Xiao.,Xiaoliang, Wang.,Cuimei, Wang.,Qingwen, Deng.,...&Xun, Hou.(2013).The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD.journal of semiconductors,34(11),113002. |
| MLA | Liang, Jing,et al."The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD".journal of semiconductors 34.11(2013):113002. |
入库方式： OAI收割
来源：半导体研究所
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