中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods

文献类型:期刊论文

;
作者An Tielei; Sun Bo; Wei Tongbo; Zhao Lixia; Duan Ruifei; Liao Yuanxun; Li Jinmin; Yi Futing
刊名journal of semiconductors ; Journal of Semiconductors
出版日期2013 ; 2013
卷号34期号:11页码:114006
学科主题半导体器件 ; 半导体器件
收录类别EI
语种英语 ; 英语
公开日期2014-04-30 ; 2014-04-30
源URL[http://ir.semi.ac.cn/handle/172111/24854]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
An Tielei,Sun Bo,Wei Tongbo,et al. Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods, Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods[J]. journal of semiconductors, Journal of Semiconductors,2013, 2013,34, 34(11):114006, 114006.
APA An Tielei.,Sun Bo.,Wei Tongbo.,Zhao Lixia.,Duan Ruifei.,...&Yi Futing.(2013).Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods.journal of semiconductors,34(11),114006.
MLA An Tielei,et al."Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods".journal of semiconductors 34.11(2013):114006.

入库方式: OAI收割

来源:半导体研究所

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