Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography
文献类型：期刊论文
| 作者 | Wu K(吴奎); Wei TB(魏同波); Lan D(蓝鼎) ; Zheng HY(郑海洋); Wang JX(王军喜); Luo Y(罗毅); Li JM(李晋闽)
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| 刊名 | Chinese Physics B
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| 出版日期 | 2014-02 |
| 卷号 | 23期号:2页码:28504 |
| 通讯作者邮箱 | tbwei@semi.ac.cn |
| ISSN号 | 1674-1056 |
| 关键词 | LIGHT-EMITTING-DIODES HIGH-EXTRACTION-EFFICIENCY BLUE IMPROVEMENT |
| 通讯作者 | Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. |
| 产权排序 | [Wu Kui; Wei Tong-Bo; Zheng Hai-Yang; Wang Jun-Xi; Li Jin-Min] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China; [Wu Kui; Luo Yi] Tsinghua Univ, State Key Lab Integrated Optoelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China; [Lan Ding] Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100190, Peoples R China |
| 合作状况 | 国内 |
| 中文摘要 | Wafer-scale SiO2 photonic crystal (PhC) patterns (SiO2 air-hole PhC, SiO2-pillar PhC) on indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2-pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures. |
| 学科主题 | Physics |
| 分类号 | 二类/Q2 |
| 资助信息 | Project supported by the National Basic Research Program of China (Grant No. 2011CB301902). |
| 收录类别 | SCI ; EI ; CSCD |
| 原文出处 | http://dx.doi.org/10.1088/1674-1056/23/2/028504 |
| 语种 | 英语 |
| CSCD记录号 | CSCD:5044725 |
| WOS记录号 | WOS:000332104800098 |
| 公开日期 | 2014-05-12 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/48794]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Wu K,Wei TB,Lan D,et al. Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography[J]. Chinese Physics B,2014,23(2):28504. |
| APA | Wu K.,Wei TB.,Lan D.,Zheng HY.,Wang JX.,...&Li JM.(2014).Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography.Chinese Physics B,23(2),28504. |
| MLA | Wu K,et al."Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography".Chinese Physics B 23.2(2014):28504. |
入库方式： OAI收割
来源：力学研究所
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