中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

文献类型:期刊论文

作者Zhang, YH; Wei, TB; Wang, JX; Lan D(蓝鼎); Chen, Y; Hu, Q; Lu, HX; Li, JM
刊名AIP Advances
出版日期2014-02
卷号4期号:2页码:27123
通讯作者邮箱tbwei@semi.ac.cn
关键词EXTRACTION
ISSN号2158-3226
产权排序[Zhang, Yonghui; Wei, Tongbo; Wang, Junxi; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China; [Lan, Ding] Chinese Acad Sci, Natl Micrograv Lab, Beijing 100080, Peoples R China
通讯作者Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
合作状况国内
中文摘要Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
学科主题Science & Technology - Other Topics; Materials Science; Physics
分类号Q3
收录类别SCI ; EI
资助信息This work was supported by the National Natural Sciences Foundation of China under Grant 61274040, 61274008 and 51102226, by the National Basic Research Program of China under Grant 2011CB301902, and by the National High Technology Program of China under Grant 2014AA032605.
原文出处http://dx.doi.org/10.1063/1.4867091
语种英语
WOS记录号WOS:000332450000023
公开日期2014-05-12
源URL[http://dspace.imech.ac.cn/handle/311007/48797]  
专题力学研究所_国家微重力实验室
推荐引用方式
GB/T 7714
Zhang, YH,Wei, TB,Wang, JX,et al. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing[J]. AIP Advances,2014,4(2):27123.
APA Zhang, YH.,Wei, TB.,Wang, JX.,蓝鼎.,Chen, Y.,...&Li, JM.(2014).The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing.AIP Advances,4(2),27123.
MLA Zhang, YH,et al."The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing".AIP Advances 4.2(2014):27123.

入库方式: OAI收割

来源:力学研究所

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