The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing
文献类型：期刊论文
| 作者 | Zhang, YH; Wei, TB; Wang, JX ; Lan D(蓝鼎); Chen, Y; Hu, Q; Lu, HX; Li, JM
|
| 刊名 | AIP Advances
 |
| 出版日期 | 2014-02 |
| 卷号 | 4期号:2页码:27123 |
| 通讯作者邮箱 | tbwei@semi.ac.cn |
| 关键词 | EXTRACTION |
| ISSN号 | 2158-3226 |
| 产权排序 | [Zhang, Yonghui; Wei, Tongbo; Wang, Junxi; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin] Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China; [Lan, Ding] Chinese Acad Sci, Natl Micrograv Lab, Beijing 100080, Peoples R China |
| 通讯作者 | Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China. |
| 合作状况 | 国内 |
| 中文摘要 | Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. |
| 学科主题 | Science & Technology - Other Topics; Materials Science; Physics |
| 分类号 | Q3 |
| 收录类别 | SCI ; EI |
| 资助信息 | This work was supported by the National Natural Sciences Foundation of China under Grant 61274040, 61274008 and 51102226, by the National Basic Research Program of China under Grant 2011CB301902, and by the National High Technology Program of China under Grant 2014AA032605. |
| 原文出处 | http://dx.doi.org/10.1063/1.4867091 |
| 语种 | 英语 |
| WOS记录号 | WOS:000332450000023 |
| 公开日期 | 2014-05-12 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/48797]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Zhang, YH,Wei, TB,Wang, JX,et al. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing[J]. AIP Advances,2014,4(2):27123. |
| APA | Zhang, YH.,Wei, TB.,Wang, JX.,蓝鼎.,Chen, Y.,...&Li, JM.(2014).The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing.AIP Advances,4(2),27123. |
| MLA | Zhang, YH,et al."The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing".AIP Advances 4.2(2014):27123. |
入库方式： OAI收割
来源：力学研究所
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