Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting
文献类型：期刊论文
| 作者 | Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang |
| 刊名 | journal of semiconductors
 |
| 出版日期 | 2013 |
| 卷号 | 34期号:6页码:063001 |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2014-05-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24897]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang. Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting[J]. journal of semiconductors,2013,34(6):063001. |
| APA | Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang.(2013).Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting.journal of semiconductors,34(6),063001. |
| MLA | Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang."Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting".journal of semiconductors 34.6(2013):063001. |
入库方式： OAI收割
来源：半导体研究所
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