Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography
文献类型：期刊论文
| ; | |
| 作者 | Zhao, Linghui; Wei, Tongbo; Wang, Junxi; Yan, Qingfeng; Zeng, Yiping; Li, Jinmin |
| 刊名 | journal of semiconductors
 ; Journal of Semiconductors
|
| 出版日期 | 2013 ; 2013 |
| 卷号 | 34期号:10页码:104005 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-05-08 ; 2014-05-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24905]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Zhao, Linghui,Wei, Tongbo,Wang, Junxi,et al. Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography, Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography[J]. journal of semiconductors, Journal of Semiconductors,2013, 2013,34, 34(10):104005, 104005. |
| APA | Zhao, Linghui,Wei, Tongbo,Wang, Junxi,Yan, Qingfeng,Zeng, Yiping,&Li, Jinmin.(2013).Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography.journal of semiconductors,34(10),104005. |
| MLA | Zhao, Linghui,et al."Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography".journal of semiconductors 34.10(2013):104005. |
入库方式： OAI收割
来源：半导体研究所
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