Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles
文献类型：期刊论文
| ; | |
| 作者 | Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu |
| 刊名 | applied physics a
 ; Applied Physics A
|
| 出版日期 | 2013 ; 2013 |
| 页码 | 1-7 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2014-05-08 ; 2014-05-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24924]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu. Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles, Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles[J]. applied physics a, Applied Physics A,2013, 2013:1-7, 1-7. |
| APA | Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu.(2013).Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles.applied physics a,1-7. |
| MLA | Huihui Ren, Jikang Jian, Chu Chen, Dong Pan, Abdulezi Ablat, Yanfei Sun, Jin Li, Rong Wu."Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles".applied physics a (2013):1-7. |
入库方式： OAI收割
来源：半导体研究所
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