中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation

文献类型:期刊论文

;
作者Meng, Xiuqing; Chen, Zhanghui; Chen, Zhuo; Wu, Fengmin; Li, Shu-Shen; Li, Jingbo; Wu, Junqiao; Wei, Su-Huai
刊名applied physics letters ; Applied Physics Letters
出版日期2013 ; 2013
卷号103期号:25页码:253102
学科主题半导体物理 ; 半导体物理
收录类别EI
语种英语 ; 英语
公开日期2014-05-08 ; 2014-05-08
源URL[http://ir.semi.ac.cn/handle/172111/24927]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Meng, Xiuqing,Chen, Zhanghui,Chen, Zhuo,et al. Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation, Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation[J]. applied physics letters, Applied Physics Letters,2013, 2013,103, 103(25):253102, 253102.
APA Meng, Xiuqing.,Chen, Zhanghui.,Chen, Zhuo.,Wu, Fengmin.,Li, Shu-Shen.,...&Wei, Su-Huai.(2013).Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation.applied physics letters,103(25),253102.
MLA Meng, Xiuqing,et al."Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation".applied physics letters 103.25(2013):253102.

入库方式: OAI收割

来源:半导体研究所

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