Investigation of N-doped FZ Si crystals
文献类型:期刊论文
作者 | Liang Junwu ; Deng Lishen ; Luan Hongfa ; Zeng Hongjun |
刊名 | the proc. of the international conference on semiconductor and ic technology. world scientific.
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出版日期 | 1986 |
页码 | 771-773 |
学科主题 | 光电子学 |
公开日期 | 2014-05-14 |
源URL | [http://ir.semi.ac.cn/handle/172111/24952] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Liang Junwu,Deng Lishen,Luan Hongfa,et al. Investigation of N-doped FZ Si crystals[J]. the proc. of the international conference on semiconductor and ic technology. world scientific.,1986:771-773. |
APA | Liang Junwu,Deng Lishen,Luan Hongfa,&Zeng Hongjun.(1986).Investigation of N-doped FZ Si crystals.the proc. of the international conference on semiconductor and ic technology. world scientific.,771-773. |
MLA | Liang Junwu,et al."Investigation of N-doped FZ Si crystals".the proc. of the international conference on semiconductor and ic technology. world scientific. (1986):771-773. |
入库方式: OAI收割
来源:半导体研究所
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