中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of N-doped FZ Si crystals

文献类型:期刊论文

作者Liang Junwu ; Deng Lishen ; Luan Hongfa ; Zeng Hongjun
刊名the proc. of the international conference on semiconductor and ic technology. world scientific.
出版日期1986
页码771-773
学科主题光电子学
公开日期2014-05-14
源URL[http://ir.semi.ac.cn/handle/172111/24952]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liang Junwu,Deng Lishen,Luan Hongfa,et al. Investigation of N-doped FZ Si crystals[J]. the proc. of the international conference on semiconductor and ic technology. world scientific.,1986:771-773.
APA Liang Junwu,Deng Lishen,Luan Hongfa,&Zeng Hongjun.(1986).Investigation of N-doped FZ Si crystals.the proc. of the international conference on semiconductor and ic technology. world scientific.,771-773.
MLA Liang Junwu,et al."Investigation of N-doped FZ Si crystals".the proc. of the international conference on semiconductor and ic technology. world scientific. (1986):771-773.

入库方式: OAI收割

来源:半导体研究所

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