Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors
文献类型：期刊论文
| 作者 | Xiaojia, Wan ; Xiaoliang, Wang ; Hongling, Xiao ; Chun, Feng ; Lijuan, Jiang ; Shenqi, Qu ; Zhanguo, Wang ; Xun, Hou |
| 刊名 | journal of semiconductors
 |
| 出版日期 | 2013 |
| 卷号 | 34期号:10页码:104002 |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2014-05-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/25001]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiaojia, Wan,Xiaoliang, Wang,Hongling, Xiao,et al. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors[J]. journal of semiconductors,2013,34(10):104002. |
| APA | Xiaojia, Wan.,Xiaoliang, Wang.,Hongling, Xiao.,Chun, Feng.,Lijuan, Jiang.,...&Xun, Hou.(2013).Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors.journal of semiconductors,34(10),104002. |
| MLA | Xiaojia, Wan,et al."Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors".journal of semiconductors 34.10(2013):104002. |
入库方式： OAI收割
来源：半导体研究所
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