Structural and electrical analysis of S+ ion bombarded p-InP(100)
文献类型：期刊论文
| 作者 | Zhao, Q. ; Zhai, G. J. ; Kwok, R. W. M. |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2006 |
| 卷号 | 253期号:3页码:1356-1364 |
| 关键词 | InP ion beam bombardment sulfur passivation XPS LEED passivated inp(100)-(1x1) surface ray photoelectron-spectroscopy (nh4)2sx-treated gaas 100 p3n5 gate insulators sulfide passivation sulfur passivation electronic states sinx/inp interface ab-initio inp |
| ISSN号 | 0169-4332 |
| 通讯作者 | 北京8701信箱 |
| 英文摘要 | The chemical state of sulfur and surface structure on low-energy S+ ion-treated p-InP(1 0 0) surface have been investigated by high-resolution X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). S' ion energy over the range of 10-100 eV was used to study the effect of ion energy on surface damage and the process of sulfur passivation on p-InP(1 0 0) by S+ ion beam bombardment. It was found that sulfur species formed on the S+ ion-treated surface. The S+ ions with energy above 50 eV were more effective in formation of In-S species, which assisted the InP surface in reconstruction into an ordered (1 x 1) structure upon annealing. After taking into account physical damage due to the process of ion bombardment, we found that 50 eV was the optimal ion energy to form In-S species in the sulfur passivation of p-InP(1 0 0). The subsequent annealing process removed donor states that were introduced during the ion bombardment of p-InP(1 0 0). Results of theoretical simulations by Transport of Ions in Materials (TRIM) are in accordance with those of experiments. |
| 学科主题 | 空间技术 |
| 收录类别 | SCI |
| 原文出处 | http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6THY-4JMKMK5-5-1&_cdi=5295&_user=1999492&_orig=search&_coverDate=11%2F30%2F2006&_sk=997469996&view=c&wchp=dGLzVtb-zSkzV&md5=be71235b21fb2a0cdf229c1d460ef0c2&ie=/sdarticle.pdf |
| 语种 | 英语 |
| 源URL | [http://ir.cssar.ac.cn/handle/122/579]  |
| 专题 | 国家空间科学中心_空间技术部 |
| 推荐引用方式 GB/T 7714 | Zhao, Q.,Zhai, G. J.,Kwok, R. W. M.. Structural and electrical analysis of S+ ion bombarded p-InP(100)[J]. Applied Surface Science,2006,253(3):1356-1364. |
| APA | Zhao, Q.,Zhai, G. J.,&Kwok, R. W. M..(2006).Structural and electrical analysis of S+ ion bombarded p-InP(100).Applied Surface Science,253(3),1356-1364. |
| MLA | Zhao, Q.,et al."Structural and electrical analysis of S+ ion bombarded p-InP(100)".Applied Surface Science 253.3(2006):1356-1364. |
入库方式： OAI收割
来源：国家空间科学中心
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