中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

文献类型:期刊论文

作者Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang
刊名applied physics letters
出版日期2013-10
卷号103期号:15页码:152109
学科主题微电子学
公开日期2014-06-03
源URL[http://ir.semi.ac.cn/handle/172111/25084]  
专题半导体研究所_集成光电子学国家重点实验室
推荐引用方式
GB/T 7714
Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth[J]. applied physics letters,2013,103(15):152109.
APA Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang.(2013).Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth.applied physics letters,103(15),152109.
MLA Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang."Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth".applied physics letters 103.15(2013):152109.

入库方式: OAI收割

来源:半导体研究所

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