Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth
文献类型:期刊论文
作者 | Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang |
刊名 | applied physics letters
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出版日期 | 2013-10 |
卷号 | 103期号:15页码:152109 |
学科主题 | 微电子学 |
公开日期 | 2014-06-03 |
源URL | [http://ir.semi.ac.cn/handle/172111/25084] ![]() |
专题 | 半导体研究所_集成光电子学国家重点实验室 |
推荐引用方式 GB/T 7714 | Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth[J]. applied physics letters,2013,103(15):152109. |
APA | Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang.(2013).Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth.applied physics letters,103(15),152109. |
MLA | Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang,and Hui Yang."Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth".applied physics letters 103.15(2013):152109. |
入库方式: OAI收割
来源:半导体研究所
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