Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer
文献类型：期刊论文
| 作者 | Song, Sannian ; Song, Zhitang ; Peng, Cheng ; Gao, Lina ; Gu, Yifeng ; Zhang, Zhonghua ; Lv, Yegang ; Yao, Dongning ; Wu, Liangcai ; Liu, Bo |
| 刊名 | NANOSCALE RESEARCH LETTERS
 |
| 出版日期 | 2013 |
| 卷号 | 8 |
| ISSN号 | 1931-7573 |
| 英文摘要 | A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb3Te layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline titanium dioxide material. Among the various thicknesses of the TiO2 buffer layer, 4 nm was the most appropriate thickness that maximized the improvement with negligible sacrifice of the other device performances, such as the reset/set resistance ratio, voltage window, and endurance. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000320155700001 |
| 公开日期 | 2014-06-13 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/13851]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Song, Sannian,Song, Zhitang,Peng, Cheng,et al. Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer[J]. NANOSCALE RESEARCH LETTERS,2013,8. |
| APA | Song, Sannian.,Song, Zhitang.,Peng, Cheng.,Gao, Lina.,Gu, Yifeng.,...&Liu, Bo.(2013).Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer.NANOSCALE RESEARCH LETTERS,8. |
| MLA | Song, Sannian,et al."Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer".NANOSCALE RESEARCH LETTERS 8(2013). |
入库方式： OAI收割
来源：上海应用物理研究所
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