中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts

文献类型:期刊论文

作者Gong, Wenbin ; Zhang, Wei ; Ren, Cuilan ; Ke, Xuezhi ; Wang, Song ; Huai, Ping ; Zhang, Wenqing ; Zhu, Zhiyuan
刊名APPLIED PHYSICS LETTERS
出版日期2013
卷号103期号:14
ISSN号0003-6951; 1077-3118
英文摘要Strain effects on tuning the interface binding as well as the charge doping at metal-graphene contacts have been investigated by using density functional theory calculations. A realizable tensile strain is found to be very effective in enhancing the interface binding as well as shifting the Fermi level. Particularly, an enhancement of the binding energy up to 315% can be achieved because of the dipole-dipole interaction. Our results presented here show that strain is an efficient way to overcome the weak binding problem at metal-graphene interface, and will motivate active experimental efforts in improving the performance of graphene-based devices. (C) 2013 AIP Publishing LLC.
收录类别SCI
语种英语
WOS记录号WOS:000325488500091
公开日期2014-06-13
源URL[http://ir.sinap.ac.cn/handle/331007/13914]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式
GB/T 7714
Gong, Wenbin,Zhang, Wei,Ren, Cuilan,et al. Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts[J]. APPLIED PHYSICS LETTERS,2013,103(14).
APA Gong, Wenbin.,Zhang, Wei.,Ren, Cuilan.,Ke, Xuezhi.,Wang, Song.,...&Zhu, Zhiyuan.(2013).Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts.APPLIED PHYSICS LETTERS,103(14).
MLA Gong, Wenbin,et al."Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts".APPLIED PHYSICS LETTERS 103.14(2013).

入库方式: OAI收割

来源:上海应用物理研究所

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