THz wave emission of GaAs induced by He+ ion implantation
文献类型：期刊论文
| 作者 | Yang, Kang ; Cao, Jianqing ; Huang, Can ; Ji, Te ; Zhang, Zengyan ; Liu, Qi ; Wu, Shengwei ; Lin, Jun ; Zhao, Hongwei ; Zhu, Zhiyong |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2013 |
| 卷号 | 307页码:CONCATENATE(Sheet1!I377,-Sheet1!J377) |
| ISSN号 | 0168-583X |
| 英文摘要 | Semi-Insulating Gallium Arsenide (SI-GaAs) was implanted with 1.5 MeV He+ ions and THz photoconductive antenna (PCA) was prepared on the implanted SI-GaAs surface. The antenna was applied as the THz wave emission source of a terahertz time domain spectroscopy (THz-TDS) and the THz wave emission ability was studied as a function of the implantation dose. It is found that the THz signal intensity increases with increase of implantation dose, and after reaching to a peak value the THz signal intensity decreases with further implantation. The best THz emission ability was achieved at a dose value between 1 x 10(15) and 1 x 10(16) ions/cm(2). It is believed that the implantation induced defects in the 1 mu m-thick surface area are responsible for the enhanced THz emission ability. The work proved that better THz photoconductive antenna than that made by low-temperature-grown GaAs (LT-GaAs) can be produced through He-ion implantation at proper dose. (C) 2013 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000321722200044 |
| 公开日期 | 2014-06-13 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/13971]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Yang, Kang,Cao, Jianqing,Huang, Can,et al. THz wave emission of GaAs induced by He+ ion implantation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,307:CONCATENATE(Sheet1!I377,-Sheet1!J377). |
| APA | Yang, Kang.,Cao, Jianqing.,Huang, Can.,Ji, Te.,Zhang, Zengyan.,...&Zhu, Zhiyong.(2013).THz wave emission of GaAs induced by He+ ion implantation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,307,CONCATENATE(Sheet1!I377,-Sheet1!J377). |
| MLA | Yang, Kang,et al."THz wave emission of GaAs induced by He+ ion implantation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 307(2013):CONCATENATE(Sheet1!I377,-Sheet1!J377). |
入库方式： OAI收割
来源：上海应用物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。