Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays
文献类型：期刊论文
| 作者 | W. J. Gong ; W. Liu ; J. N. Feng ; D. S. Kim ; C. J. Choi ; Z. D. Zhang |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2014 |
| 卷号 | 115期号:13 |
| ISSN号 | 0021-8979 |
| 关键词 | random-field model magnetic nanostructures anisotropy networks |
| 原文出处 | |
| 语种 | 英语 |
| 公开日期 | 2014-07-03 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/72846]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | W. J. Gong,W. Liu,J. N. Feng,et al. Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays[J]. Journal of Applied Physics,2014,115(13). |
| APA | W. J. Gong,W. Liu,J. N. Feng,D. S. Kim,C. J. Choi,&Z. D. Zhang.(2014).Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays.Journal of Applied Physics,115(13). |
| MLA | W. J. Gong,et al."Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays".Journal of Applied Physics 115.13(2014). |
入库方式： OAI收割
来源：金属研究所
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