Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes
文献类型：期刊论文
| 作者 | Wei TB; Wu K ; Lan D(蓝鼎); Sun B; Zhang YH; Chen Y; Huo ZQ; Hu Q; Wang JX; Zeng YP
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| 刊名 | Aip Advances
 |
| 出版日期 | 2014-06 |
| 卷号 | 4期号:6页码:67119 |
| 通讯作者邮箱 | tbwei@semi.ac.cn |
| ISSN号 | 2158-3226 |
| 产权排序 | [Wei, Tongbo; Wu, Kui; Sun, Bo; Zhang, Yonghui; Chen, Yu; Huo, Ziqiang; Hu, Qiang; Wang, Junxi; Zeng, Yiping; Li, Jinmin] Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China; [Lan, Ding] Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China |
| 通讯作者 | Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China. |
| 中文摘要 | Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. |
| 学科主题 | Science & Technology - Other Topics; Materials Science; Physics |
| 分类号 | Q3 |
| 收录类别 | SCI ; EI |
| 资助信息 | This work was supported by the National Natural Sciences Foundation of China under Grant 61274040, 61274008 and 51102226, the National Basic Research Program of China under Grant 2011CB301902, the National High Technology Program of China under Grant 2014AA032605 and Youth Innovation Promotion Association, Chinese Academy of Sciences. |
| 原文出处 | http://dx.doi.org/10.1063/1.4882179 |
| 语种 | 英语 |
| WOS记录号 | WOS:000338995700020 |
| 公开日期 | 2014-09-03 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/49031]  |
| 专题 | 力学研究所_国家微重力实验室 |
| 推荐引用方式 GB/T 7714 | Wei TB,Wu K,Lan D,et al. Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes[J]. Aip Advances,2014,4(6):67119. |
| APA | Wei TB.,Wu K.,Lan D.,Sun B.,Zhang YH.,...&Li JM.(2014).Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes.Aip Advances,4(6),67119. |
| MLA | Wei TB,et al."Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes".Aip Advances 4.6(2014):67119. |
入库方式： OAI收割
来源：力学研究所
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