The effect of the Ga content on the photocatalytic hydrogen evolution of CuIn1-xGaxS2 nanocrystals
文献类型:期刊论文
作者 | Yu, Xuelian1,2; An, Xiaoqiang3; Shavel, Alexey1; Ibanez, Maria1; Cabot, Andreu1,4 |
刊名 | JOURNAL OF MATERIALS CHEMISTRY A
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出版日期 | 2014 |
卷号 | 2期号:31页码:12317-12322 |
关键词 | QUATERNARY CHALCOGENIDE NANOCRYSTALS SOLAR-CELLS PHOTOELECTROCHEMICAL CHARACTERIZATION SEMICONDUCTING PHOTOELECTRODES THERMOELECTRIC PROPERTIES SPLITTING WATER THIN-FILMS GENERATION EFFICIENCY NANORODS |
ISSN号 | 2050-7488 |
其他题名 | J. Mater. Chem. A |
中文摘要 | We report on the photocatalytic hydrogen evolution under full-arc light irradiation of CuIn1-xGaxS2 wurtzite nanocrystals in the presence of SO32- and S2- as sacrificial reagents. We analyzed the hydrogen generation rate as a function of the Ga content and associated it with the energy band positions. For photocatalytic water splitting, the CuInS2 bandgap is slightly too low to efficiently overcome the reaction over-potential. The presence of Ga shifts up the CuInS2 conduction band edge providing a larger driving force for photogenerated carriers to activate the water splitting reduction reaction. The larger the Ga content, the more energetically favorable the electron injection, and thus a more efficient use of the photogenerated carriers is reached. However, the band gap increase associated with the Ga incorporation reduces the concentration of photogenerated carriers available for water splitting, and consequently a lower hydrogen conversion rate is obtained for very high Ga contents. The optimum Ga concentration was experimentally found at CuIn0.3Ga0.7S2. |
英文摘要 | We report on the photocatalytic hydrogen evolution under full-arc light irradiation of CuIn1-xGaxS2 wurtzite nanocrystals in the presence of SO32- and S2- as sacrificial reagents. We analyzed the hydrogen generation rate as a function of the Ga content and associated it with the energy band positions. For photocatalytic water splitting, the CuInS2 bandgap is slightly too low to efficiently overcome the reaction over-potential. The presence of Ga shifts up the CuInS2 conduction band edge providing a larger driving force for photogenerated carriers to activate the water splitting reduction reaction. The larger the Ga content, the more energetically favorable the electron injection, and thus a more efficient use of the photogenerated carriers is reached. However, the band gap increase associated with the Ga incorporation reduces the concentration of photogenerated carriers available for water splitting, and consequently a lower hydrogen conversion rate is obtained for very high Ga contents. The optimum Ga concentration was experimentally found at CuIn0.3Ga0.7S2. |
WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
类目[WOS] | Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary |
研究领域[WOS] | Chemistry ; Energy & Fuels ; Materials Science |
关键词[WOS] | QUATERNARY CHALCOGENIDE NANOCRYSTALS ; SOLAR-CELLS ; THERMOELECTRIC PROPERTIES ; PHOTOELECTROCHEMICAL CHARACTERIZATION ; SEMICONDUCTING PHOTOELECTRODES ; SPLITTING WATER ; THIN-FILMS ; GENERATION ; EFFICIENCY ; NANORODS |
收录类别 | SCI |
原文出处 | |
语种 | 英语 |
WOS记录号 | WOS:000339625500027 |
公开日期 | 2014-08-28 |
版本 | 出版稿 |
源URL | [http://ir.ipe.ac.cn/handle/122111/11018] ![]() |
专题 | 过程工程研究所_研究所(批量导入) |
作者单位 | 1.Catalonia Energy Res Inst IREC, Barcelona 08930, Spain 2.Chinese Acad Sci, Inst Proc Engn, Beijing 100190, Peoples R China 3.UCL, Dept Chem Engn, London WC1E 7JE, England 4.ICREA, Barcelona 08010, Spain |
推荐引用方式 GB/T 7714 | Yu, Xuelian,An, Xiaoqiang,Shavel, Alexey,et al. The effect of the Ga content on the photocatalytic hydrogen evolution of CuIn1-xGaxS2 nanocrystals[J]. JOURNAL OF MATERIALS CHEMISTRY A,2014,2(31):12317-12322. |
APA | Yu, Xuelian,An, Xiaoqiang,Shavel, Alexey,Ibanez, Maria,&Cabot, Andreu.(2014).The effect of the Ga content on the photocatalytic hydrogen evolution of CuIn1-xGaxS2 nanocrystals.JOURNAL OF MATERIALS CHEMISTRY A,2(31),12317-12322. |
MLA | Yu, Xuelian,et al."The effect of the Ga content on the photocatalytic hydrogen evolution of CuIn1-xGaxS2 nanocrystals".JOURNAL OF MATERIALS CHEMISTRY A 2.31(2014):12317-12322. |
入库方式: OAI收割
来源:过程工程研究所
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