Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
文献类型：期刊论文
| 作者 | Wang, Meihan1; Lei, Hao2; Seki, Yoshiyuki3; Seki, Shigeyuki4; Sawada, Yutaka3; Hoshi, Yoichi3; Wang, Shaohong1; Sun, Lixian5 |
| 刊名 | journal of thermal analysis and calorimetry
 |
| 出版日期 | 2013-02-01 |
| 卷号 | 111期号:2页码:1457-1461 |
| 关键词 | Partly crystallized amorphous IO film Water vapor Thermal crystallization kinetic Electrical properties |
| 产权排序 | 待补充 |
| 通讯作者 | wang ; m.h. |
| 合作状况 | 英 |
| 英文摘要 | partly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. xrd analysis revealed that appropriate water vapor could suppress the film's crystallinity. in situ thermal crystallization process was monitored by high-temperature xrd. the crystallization data were analyzed using the kolmogorov-johnson-mehl-avrami equation. the kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. the activation energy of crystallization for film deposited under 1 x 10(-5) torr water vapor pressure was determined to be 30.7 kj mol(-1), which is higher than 18.9 kj mol(-1) for film deposited in the absence of water vapor. the increased activation energy caused by the chemically bonded hydrogen and embedded o-h bonds from the water vapor resulted in the suppression of crystallization. introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of hall mobility. the resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects. |
| WOS标题词 | science & technology ; physical sciences |
| 学科主题 | 物理化学 |
| 类目[WOS] | chemistry, analytical ; chemistry, physical |
| 研究领域[WOS] | chemistry |
| 关键词[WOS] | tin-oxide ; microstructures |
| 收录类别 | SCI |
| 资助信息 | 5，8 |
| 原文出处 | 1461 |
| 语种 | 英语 |
| WOS记录号 | WOS:000313409700058 |
| 公开日期 | 2014-09-11 |
| 源URL | [http://159.226.238.44/handle/321008/119211]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | 1.Shenyang Univ, Ctr Sci Res, Shenyang 110044, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Dept Surface Engn Mat, Shenyang 110016, Peoples R China 3.Tokyo Polytech Univ, Ctr Hyper Media Res, Atsugi, Kanagawa 2430297, Japan 4.Sendai Natl Coll Technol, Dept Elect Engn, Aoba Ku, Sendai, Miyagi 9893128, Japan 5.Chinese Acad Sci, Dalian Inst Chem Phys, Mat & Thermochem Lab, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Meihan,Lei, Hao,Seki, Yoshiyuki,et al. Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor[J]. journal of thermal analysis and calorimetry,2013,111(2):1457-1461. |
| APA | Wang, Meihan.,Lei, Hao.,Seki, Yoshiyuki.,Seki, Shigeyuki.,Sawada, Yutaka.,...&Sun, Lixian.(2013).Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor.journal of thermal analysis and calorimetry,111(2),1457-1461. |
| MLA | Wang, Meihan,et al."Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor".journal of thermal analysis and calorimetry 111.2(2013):1457-1461. |
入库方式： OAI收割
来源：大连化学物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。