Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode
文献类型：期刊论文
| 作者 | Cai, Zhipeng1; Yang, Wenzheng2 ; Tang, Weidong1; Hou, Xun1
|
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2013-04-01 |
| 卷号 | 16期号:2页码:238-244 |
| 关键词 | Temporal response The average delay time Large exponential-doping GaAs photocathode |
| ISSN号 | 1369-8001 |
| 英文摘要 | the theory of temporal response properties for a large exponential-doping transmission mode gaas photocathode is discussed in detail. by the introduction of a new concept referred to as "average decay time", the deficiency usually caused by the boundary condition in the previous calculations is effectively eliminated. the analytical results show that the response time of the new gaas photocathode can be significantly reduced to several picoseconds in the absence of bias. in addition, the thickness of the gaas absorption layer we obtained is much larger than that of traditional gaas photocathodes with the same response time, which means that the novel photocathode with ultrafast time response will have higher yield, especially in near-infrared region. (c) 2012 elsevier ltd. all rights reserved. |
| WOS标题词 | science & technology ; technology ; physical sciences |
| 类目[WOS] | engineering, electrical & electronic ; materials science, multidisciplinary ; physics, applied ; physics, condensed matter |
| 研究领域[WOS] | engineering ; materials science ; physics |
| 关键词[WOS] | theoretical calculation ; electron source ; surface ; range |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000316581400002 |
| 公开日期 | 2014-09-17 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/21839]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Shaanxi, Peoples R China 2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cai, Zhipeng,Yang, Wenzheng,Tang, Weidong,et al. Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode[J]. materials science in semiconductor processing,2013,16(2):238-244. |
| APA | Cai, Zhipeng,Yang, Wenzheng,Tang, Weidong,&Hou, Xun.(2013).Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode.materials science in semiconductor processing,16(2),238-244. |
| MLA | Cai, Zhipeng,et al."Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode".materials science in semiconductor processing 16.2(2013):238-244. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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